منابع مشابه
Trends of Semiconductor Technology for Total System Solutions
OVERVIEW: Recent progress in electronics technology has been remarkable. Progress in electronics overall has been supported by semiconductor technology with the information equipment field, as typified by multimedia, but one leading example. The semiconductor technology that makes implementation of a system on chip possible has contributed both to higher levels of system performance and also to...
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Semiconductor flash memory is an indispensable component of modern electronic systems. The minimum feature size of an individual CMOSFET has shrunk to 15nm with an equivalent gate oxide thickness (EOT) of 0.8nm in 2001. However, semiconductor flash memory scaling is far behind CMOS logic device scaling. For example, the EOT of the gate stack in semiconductor flash memory is still more than 10nm...
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This chapter describes the fundamentals of the processes used by National Semiconductor to assemble IC devices in electronic packages. Electronic packaging provides the interconnection from the IC to the printed circuit board (PCB). Another function is to provide the desired mechanical and environmental protection to ensure reliability and performance. Three fundamental assembly flow processes ...
متن کاملSemiconductor Devices and Technology
PREFACE It is customary for a book to have a preface, wherein the author explains why he wrote it and how it differs from all the other books on a similar subject. This book came about because I was asked to update one of our sophomore courses, in part to add some material on semiconductor devices and technology and in part to increase the breadth of the course and improve its links to other pa...
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The paper deals with the analysis of pair di usion models in semiconductor technology. The underlying model contains reaction-drift-di usion equations for the mobile point defects and dopant-defect pairs as well as reaction equations for immobile dopants which are coupled with a nonlinear Poisson equation for the chemical potential of the electrons. For homogeneous structures we present an exis...
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ژورنال
عنوان ژورنال: The Journal of the Institute of Television Engineers of Japan
سال: 1994
ISSN: 0386-6831,1884-9652
DOI: 10.3169/itej1978.48.565